Occupational Safety and Health Administration OSHA

Major Categories of Silicon Vabor Phase Epitaxy (Table 7)

  • Pressure - Atmospheric
  • Temperature - 900-1300° C
  • Silicon sources - Silane (SiH4), Silicon Tetrachloride (SiCl4), Trichlorosilane (SiHCl3), and Dichlorosilane (SiH2Cl2)
  • Dopant sources - Arsine (AsH3), Phosphine (PH3), Diborane (B2H6)
  • Dopant gas concentration - ~ 100 ppm
  • Etchant gas - Hydrogen Chloride (HCl)
  • Etchant gas concentration - ~ 1-4%
  • Carrier gases - Hydrogen (H2), Nitrogen (N2)
  • Heating source - Radio frequency (RF) or Infrared (IR)
Vapor Phase EPI Types
  1. Hydrogen reduction of Silicon Tetrachloride (1150-1300°C)

    SiCl4 + 2 H2 —> Si + 4 HCl

  2. Pyrolytic decomposition of Silane (1000-1100°C)

    SiH4 —> Si + 2 H2

  3. Hydrogen reduction of Trichlorosilane

    SiHCl3 + H2 —> Si + 3 HCl

  4. Reduction of Dichlorosilane

    SiH2Cl2 <—> Si + 2 HCl

Back to Top

Thank You for Visiting Our Website

You are exiting the Department of Labor's Web server.

The Department of Labor does not endorse, takes no responsibility for, and exercises no control over the linked organization or its views, or contents, nor does it vouch for the accuracy or accessibility of the information contained on the destination server. The Department of Labor also cannot authorize the use of copyrighted materials contained in linked Web sites. Users must request such authorization from the sponsor of the linked Web site. Thank you for visiting our site. Please click the button below to continue.