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Major Categories of Silicon Vabor Phase Epitaxy (Table 7)

  • Pressure - Atmospheric
  • Temperature - 900-1300° C
  • Silicon sources - Silane (SiH4), Silicon Tetrachloride (SiCl4), Trichlorosilane (SiHCl3), and Dichlorosilane (SiH2Cl2)
  • Dopant sources - Arsine (AsH3), Phosphine (PH3), Diborane (B2H6)
  • Dopant gas concentration - ~ 100 ppm
  • Etchant gas - Hydrogen Chloride (HCl)
  • Etchant gas concentration - ~ 1-4%
  • Carrier gases - Hydrogen (H2), Nitrogen (N2)
  • Heating source - Radio frequency (RF) or Infrared (IR)
Vapor Phase EPI Types
  1. Hydrogen reduction of Silicon Tetrachloride (1150-1300°C)

    SiCl4 + 2 H2 —> Si + 4 HCl

  2. Pyrolytic decomposition of Silane (1000-1100°C)

    SiH4 —> Si + 2 H2

  3. Hydrogen reduction of Trichlorosilane

    SiHCl3 + H2 —> Si + 3 HCl

  4. Reduction of Dichlorosilane

    SiH2Cl2 <—> Si + 2 HCl

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