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Parameters
Pressure - Atmospheric
Temperature - 900-1300° C
Silicon sources - Silane (SiH4), Silicon Tetrachloride (SiCl4), 
Trichlorosilane (SiHCl3), and Dichlorosilane (SiH2Cl2)
Dopant sources - Arsine (AsH3), Phosphine (PH3), Diborane (B2H6)
Dopant gas concentration - ~ 100 ppm
Etchant gas - Hydrogen Chloride (HCl)
Etchant gas concentration - ~ 1-4%
Carrier gases - Hydrogen (H2), Nitrogen (N2)
Heating source - Radio frequency (RF) or Infrared (IR)
Vapor Phase EPI Types
  1. Hydrogen reduction of Silicon Tetrachloride (1150-1300°C)
    SiCl4 + 2 H2 —> Si + 4 HCl
  2. Pyrolytic decomposition of Silane (1000-1100°C)
    SiH4 —> Si + 2 H2
  3. Hydrogen reduction of Trichlorosilane
    SiHCl3 + H2 —> Si + 3 HCl
  4. Reduction of Dichlorosilane
    SiH2Cl2 <—> Si + 2 HCl