A high-temperature chemical vapor deposition (CVD) of silicon nitride (Si3N4) is performed, using a standard diffusion furnace. The gaseous sources are silane (SiH4) and ammonia (NH3) with a nitrogen carrier gas. (See Silicon Device Manufacturing - Device Fabrication - Deposition)
The following are potential hazards of nitride deposition.
- Flammable, Explosive, and Pyrophoric Gases
- Toxic, Irritative, and Corrosive Gases
- Radiofrequency (RF) and Infrared (IR) Radiation
- Thermal Burns
- Reaction-Product Residues
Toxic, Irritative, and Corrosive Gases
- Possible employee exposure to toxic, irritative, and corrosive gases, including SiH4 and NH3.
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