Occupational Safety and Health Administration OSHA

Device Fabrication

Nitride Deposition

A high-temperature chemical vapor deposition (CVD) of silicon nitride (Si3N4) is performed, using a standard diffusion furnace. The gaseous sources are silane (SiH4) and ammonia (NH3) with a nitrogen carrier gas. (See Silicon Device Manufacturing - Device Fabrication - Deposition)

The following are potential hazards of nitride deposition.

Toxic, Irritative, and Corrosive Gases

Potential Hazard

  • Possible employee exposure to toxic, irritative, and corrosive gases, including SiH4 and NH3.

Possible Solutions

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