The fabrication of an integrated circuit involves a sequence of processes that may be repeated many times before a circuit is complete. The device fabrication steps discussed in this and subsequent sections may be repeated anywhere from six to 15 times to achieve the desired product Robotic arm transfers a wafer
Generally, the first step in semiconductor device fabrication involves the oxidation of the wafer surface in order to grow a thin layer of silicon dioxide (SiO2). This oxide is used to provide insulating and passivation layers.
The following are the potential hazards of oxidation.
Occupational Health Guidelines for Chemical Hazards. US Department of Health and Human Services (DHHS), National Institute for Occupational Safety and Health (NIOSH) Publication No. 81-123, (1981, January). Provides a table of contents of guidelines for many hazardous chemicals. The files provide technical chemical information, including chemical and physical properties, health effects, exposure limits, and recommendations for medical monitoring, personal protective equipment (PPE), and control procedures.
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