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Safety and Health Topics > Semiconductors > Silicon > Device Fabrication: Doping (Junction Formation) > Junction... Junction Formation Dopants for Diffusion and Ion Implantation (Table 5) Element Compound Formula State Technique n-type         Antimony Antimony Trioxide Sb2O3 solid diffusion   Antimony Trichloride SbCl3 liquid diffusion Arsenic Arsenic Trioxide As2O3 solid diffusion   Arsenic Trioxide As2O3 Propanol Ethyl Acetate liquid diffusion - spin on   Arsine AsH3 gas diffusion ion implantation   Arsenic Penta-fluoride AsF5 gas ion implantation Phosphorus Phosphorus Pentoxide P2O5 solid diffusion   Phosphorus Pentoxide P2O5 solvent liquid diffusion - spin on   Phosphorus Tribromide PBr3 liquid diffusion   Phosphorus Trichloride PCl3 liquid diffusion   Phosphorus Oxychloride POCl3 liquid diffusion   Phosphine PH3 gas diffusion ion implantation   Phosphorus Pentafluoride PF5 gas ion implantation p-type         Boron Boron Trioxide B2O3 solid diffusion   Boron Nitride BN solid diffusion   Boron Tribromide BBr3 Glycol ether liquid diffusion   Boron Trioxide B2O3 liquid diffusion - spin on   Triethylborate B(COC2H5)3 liquid diffusion - spin on   Silicon Tetrabromide SiBr4 liquid diffusion   Boron Trichloride BCl3 liquid diffusion ion implantation   Boron Trifluoride BF3 gas ion implantation   Diborane B2H6 gas diffusion ion implantation

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