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U.S. Department of Labor |
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| Occupational Safety & Health Administration | ||||||
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| Safety
and Health Topics > Semiconductors
>
Gallium Arsenide
> Device Fabrication: Diffusion
Device Fabrication: Diffusion A closed ampoule zinc diarsenide solid source diffusion is performed in a vacuum diffusion furnace at 720șC, utilizing a nitrogen carrier gas. (See Silicon Device Manufacturing - Device Fabrication - Doping (Junction Formation)) Potential Hazards |
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