U.S. Department of Labor
	Occupational Safety & Health Administration
	www.osha.gov		[skip navigational links]	Search	Advanced Search | A-Z Index

Semiconductors: Gallium Arsenide Device Manufacturing Processes and Related Hazards Semiconductor manufacturing for gallium arsenide devices includes four main operations: (1) Ingot growing, (2) Wafer processing, (3) Epitaxy, and (4) Device fabrication. The links below provide further information on the various processes, related hazards, and controls for each of these main operations. Additional links refer to various topics contained in the OSHA Safety and Health Topics website. Information on this page is general; actual processes will vary with each production facility. A complete hazard inventory should be based on the hazard analysis of the actual process in question. Ingot Growing Introduction Charge Preparation Ampoule Load and Seal Furnace Growth Ampoule Breakout Ingot and Remelt Sandblasting/Cleaning Wafer Processing Ingot Evaluation and Machining Wafer Preparation Epitaxy Introduction Reactor Load and Unload Reactor Cleaning Device Fabrication Nitride Deposition Photolithography Wet Etching Plasma Etching and Ashing Diffusion Metallization Alloying Backlapping Final Test Definitions   Revised: 14 January 2004		Safety and Health  Topics        Semiconductors   Standards   Hazards and Controls   Additional Information   Credits
Back to Top www.osha.gov www.dol.gov Contact Us | Freedom of Information Act | Customer Survey Privacy and Security Statement | Disclaimers Occupational Safety & Health Administration 200 Constitution Avenue, NW Washington, DC 20210