Pressure - Atmospheric
Temperature - 900-1300° C
Silicon sources - Silane (SiH₄), Silicon Tetrachloride (SiCl₄), 
Trichlorosilane (SiHCl₃), and Dichlorosilane (SiH₂Cl₂)
Dopant sources - Arsine (AsH₃), Phosphine (PH₃), Diborane (B₂H₆)
Dopant gas concentration - ~ 100 ppm
Etchant gas - Hydrogen Chloride (HCl)
Etchant gas concentration - ~ 1-4%
Carrier gases - Hydrogen (H₂), Nitrogen (N₂)
Heating source - Radio frequency (RF) or Infrared (IR)

1. Hydrogen reduction of Silicon Tetrachloride (1150-1300°C)
   SiCl₄ + 2 H₂ —> Si + 4 HCl
2. Pyrolytic decomposition of Silane (1000-1100°C)
   SiH₄ —> Si + 2 H₂
3. Hydrogen reduction of Trichlorosilane
   SiHCl₃ + H₂ —> Si + 3 HCl
4. Reduction of Dichlorosilane
   SiH₂Cl₂ <—> Si + 2 HCl