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Plasma Etching Gases and Etched Materials (Table 3)
| Material |
Gas |
|
Silicon
|
|
Polysilicon (Si) and Silicon
|
CF + O2, CCL3 or CF3Cl, CF4 and HCl |
Silicon Dioxide (SiO2)
|
C2F6, C3F8, CF4, SiF4, C5F12,
CHF3,
CCl2F2, SF6, HF |
Silicon Nitride (Si3N4)
|
CF4 + Ar, CF4 + O2, CF4 + H2 |
| Metals |
|
Aluminum (Al)
|
CCl4 or BCl3 + He or Ar |
Chromium (Cr)
|
CCl4 |
Chromium Oxide (CrO3)
|
Cl2 + Ar or CCl4 + Ar |
Gallium Arsenide (GaAs)
|
CCl2F2 |
Vanadium (V)
Titanium (Ti)
Tantalum (Ta)
Molybdenum (Mo)
Tungsten (W)
|
CF4 |
|