U.S. Department of Labor
	Occupational Safety & Health Administration
	www.osha.gov		[skip navigational links]	Search	Advanced Search | A-Z Index

Safety and Health Topics > Semiconductors > Gallium Arsenide > Ingot Growing: Ingot and Remelt... Ingot Growing: Ingot and Remelt Sandblasting/Cleaning The single-crystal GaAs ingots and polycrystalline defects must be sandblasted and cleaned to remove exterior oxides and contaminants. The sandblasting is done in a glove-box type bead blaster utilizing either silicon carbide or calcined alumina blasting media. Wet cleaning is done in wet chemical baths provided with local exhaust ventilation and utilizing HCl/HNO3 or alcohol rinses (isopropyl and/or methyl). Potential Hazards Arsenic Chemicals Chemicals Potential Hazard Possible employee exposure to chemicals used for cleaning. Acid solutions of HCl/HNO3 and isopropyl/methyl alcohol solutions are commonly used. Possible Solutions See the Possible Solutions: Chemicals page. Additional Information OSHA Health Guidelines pages: Hydrogen Chloride Isopropyl Alcohol

Back to Top www.osha.gov	www.dol.gov
Contact Us | Freedom of Information Act | Customer Survey Privacy and Security Statement | Disclaimers
Occupational Safety & Health Administration 200 Constitution Avenue, NW Washington, DC 20210