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Safety and Health Topics > Semiconductors > Gallium Arsenide > Ingot Growing: Ingot and Remelt... Ingot Growing: Ingot and Remelt Sandblasting/Cleaning The single-crystal GaAs ingots and polycrystalline defects must be sandblasted and cleaned to remove exterior oxides and contaminants. The sandblasting is done in a glove-box type bead blaster utilizing either silicon carbide or calcined alumina blasting media. Wet cleaning is done in wet chemical baths provided with local exhaust ventilation and utilizing HCl/HNO3 or alcohol rinses (isopropyl and/or methyl). Potential Hazards Arsenic Chemicals Chemicals Potential Hazard Possible employee exposure to chemicals used for cleaning. Acid solutions of HCl/HNO3 and isopropyl/methyl alcohol solutions are commonly used. Possible Solutions See the Possible Solutions: Chemicals page. Additional Information OSHA Health Guidelines pages: Hydrogen Chloride Isopropyl Alcohol

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