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U.S. Department of Labor |
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| Occupational Safety & Health Administration | ||||||
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| Safety and Health
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Semiconductors
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Gallium Arsenide
> Epitaxy: Reactor Load and Unload
Epitaxy: Reactor Load and Unload To begin, the degreased and polished wafers initially receive a pre-epitaxy etch and cleaning step. This involves a sequential wet chemical dipping operation using sulfuric acid, hydrogen peroxide, and water (5:1:1); a de-ionized water rinse; and finally, an isopropyl alcohol clean/dry. The primary technique in use for VPE in LED processing is the III-halogen and V-hydrogen system. It involves a two-cycle process; first, growing the epitaxial layer of GaAsP on the GaAs substrate, next, an etch cycle to clean the quartz reactor chamber of impurities. During the epitaxial growth cycle, the pre-cleansed GaAs wafers are loaded into a vertical quartz reactor chamber containing an upper reservoir of elemental liquid gallium over which anhydrous HCl gas is metered, forming GaCl3. A V-hydrogen-hydride gas mixture of 10%-AsH3 and 5%-PH3/H3 carrier is also metered into the reaction chamber with the addition of 50 ppm dimethyl telluride and 25 ppm diethyl telluride gaseous dopants. The chemical species in the "hot zone" of the quartz reactor react, and in the "cold zone" form the desired layer of GaAsP on the wafer substrate as well as on the interior of the reactor chamber. Effluents from the reactor are routed to a hydrogen torch system for pyrolysis and vented to a wet scrubber system or other exhaust conditioning system. The etch cycle is performed at the end of the grow cycle and on new quartz reactors to clean the interior surface of impurities. Undiluted hydrogen chloride gas is metered into the chamber for periods of 5-15 minutes. The effluents are vented to the wet scrubber system for neutralization. At the end of both the growth and etch cycles, an extended nitrogen purge is used to flush the reactor chamber of toxic and corrosive gases. Potential Hazards
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