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Safety and Health Topics > Semiconductors > Gallium Arsenide > Device Fabrication: Nitride Deposition Device Fabrication: Nitride Deposition A high-temperature chemical vapor deposition (CVD) of silicon nitride (Si3N4) is performed, using a standard diffusion furnace. The gaseous sources are silane (SiH4) and ammonia (NH3) with a nitrogen carrier gas. (See Silicon Device Manufacturing - Device Fabrication - Deposition) Potential Hazards Electricity Flammable, Explosive, and Pyrophoric Gases Toxic, Irritative, and Corrosive Gases RF and IR Radiation Thermal Burns Reaction-Product Residues Toxic, Irritative, and Corrosive Gases Potential Hazard Possible employee exposure to toxic, irritative, and corrosive gases, including SiH4 and NH3. Possible Solutions See the Possible Solutions: Toxic, Irritative, and Corrosive Gases page.

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